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应用科学学报 ›› 1989, Vol. 7 ›› Issue (1): 52-56.

• 论文 • 上一篇    下一篇

砷化镓-氧化硅界面特性研究

盛箎, 任云珠   

  1. 复旦大学
  • 收稿日期:1986-01-13 修回日期:1986-05-15 出版日期:1989-03-31 发布日期:1989-03-31

THE ELECTRICAL CHARACTERISTICS OF GaAs-SiO INTERFACE FABRICATED RY LOW TEMPERATURE PROCESS

SHENG CHI, REN YUNZHU   

  1. Fudan University
  • Received:1986-01-13 Revised:1986-05-15 Online:1989-03-31 Published:1989-03-31

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摘要： 本文报道了用真空蒸发法在砷化镓上淀积一氧化硅.在蒸发过程中保持砷化镓表面温度低于150℃.可获得低损伤的砷化镓-一氧化硅界面.

Abstract: A low-temperature process for producing the GaAs MIS structure based on the slow evaporation of powder SiO on the room-temperature GaAs substrate is developed. The as-grown GaAs-SiO MIS has a low interface state density of 8×1011/cm2·eV and a low hysteresis. No frequency dispersion of the accumulation capacitance is found, as explained by the frequency-dependent permittivity of SiO.