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应用科学学报 ›› 1993, Vol. 11 ›› Issue (3): 248-252.

• 论文 • 上一篇    下一篇

双极型晶体管发射区有效杂质分布的温度关系

郑茳, 王燕, 黄勤, 吴金, 魏同立   

  1. 东南大学
  • 收稿日期:1991-07-08 出版日期:1993-09-30 发布日期:1993-09-30
  • 基金资助:
    国家自然科学基金资助项目

TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS

ZHENG JIANG, WANG YAN, HUANG QIN, WU JIN, WEI TONGLI   

  1. Southeast University
  • Received:1991-07-08 Online:1993-09-30 Published:1993-09-30

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摘要： 从理论上研究了双极型晶体管发射区中有效杂质分布NEeff在不同温度下与发射区浓度NE的关系,结果表明:常温和高温时,NEeff随NE的增大而上升;在低温下,NEeff则随NE的增大而下降,而在某一特殊温度时NEeff将与NE无关,这将为双极晶体管提供设计依据.

关键词: 有效杂质分布, 温度, 晶体管

Abstract: In this paper, the relation between the effective doping distribution NEeff and the doping concentration NE in the emitter of silicon bipolar transistors at different temperatures is studied theoretically. The results indicate that NEeff increases as NE rises at room and high temperatures; however, NEeff will decrease as NE rises at low temperatures; and NEeff shows no relation to NE at a particular temperature. These results will provide the design foundation of bipolar transistors for low temperature operation.

Key words: temperature, transistor, effective doping distribution