English

应用科学学报 ›› 1997, Vol. 15 ›› Issue (4): 429-435.

• 论文 • 上一篇    下一篇

HBT的PN结偏移效应

张玉明1, 张义门1, 罗晋生2   

  1. 1. 西安电子科技大学;
    2. 西安交通大学
  • 收稿日期:1995-07-25 修回日期:1996-02-15 出版日期:1997-12-31 发布日期:1997-12-31
  • 作者简介:张玉明:讲师,西安电子科技大学微电子研究所,西安 710071

EFFECTS OF DISPLACED P-N JUNCTION OF HBT

ZHANG YUMING1, ZHANG YIMEN1, LUO JINSHENG2   

  1. 1. Mcroelectronics Institute of Xidian University, Xi'an 710071;
    2. Mcroelectronics department of Xi'an jiaotong University, Xi'an 710049
  • Received:1995-07-25 Revised:1996-02-15 Online:1997-12-31 Published:1997-12-31

PDF

75

被引次数

2

摘要：

采用流体动力学输运模型详细分析了发射区PN结偏移对AlGaAs/GaAsHBT器件性能的影响,提出了器件优化设计的原则.在中等和小的偏压下为了提高β,PN结应向宽禁带层偏移,而为了得到大电流下大的电流放大倍数则应采用PN结与异质结对准的结构.

关键词: 计算机模拟, 流体动力学输运模型, 异质结晶体管

Abstract:

The Hydrodynamic Transport Model is used to simulate the effects of displacemeilt of PN junctions of HBT. The electric characteristics are shown to be drastically altered due to changes in the potential profiles and in recombination in both neutral base and space-charge region of the emitter. The effects of a small displacement of the PN junctions from emitter-base are examined and results for current gains and cutoff frequencies are given.

Key words: computer simulation, hydrodynamic transport model, HBT