English

应用科学学报 ›› 1996, Vol. 14 ›› Issue (2): 243-247.

• 论文 • 上一篇    下一篇

复合结构的静电感应器件

李思渊, 刘肃, 刘瑞喜, 杨建红   

  1. 兰州大学
  • 收稿日期:1994-07-11 修回日期:1995-01-07 出版日期:1996-06-30 发布日期:1996-06-30
  • 作者简介:李思渊:教授,兰州大学物理系,兰州 730001

THE STATIC INDUCTION DEVICES WITH COMPLEX STRUCTURE

S Y LI, S LIU R, X LIU, J H YANG   

  1. Lanzhou University
  • Received:1994-07-11 Revised:1995-01-07 Online:1996-06-30 Published:1996-06-30

PDF

90

被引次数

10

摘要： 表面栅结构(S-S)和埋栅结构(B-S)作为静电感应器件的基本结构已由若干作者进行过研究[1~5]。近几年我们采用了一种介于上述两种结构之间的结构(用O-S表示)来制作静电感应器件(SID),包括静电感应晶体管(SIT)、静电感应晶闸管(SITH)以及双极型静电感应晶体管(BSIT).所制作的器件具有典型的I~V特性和令人满意的电学参数.

关键词: 静电感应器件, 复合结构, I~V特性

Abstract: A complex structure (C-S) which can be used in fabricating the Static Induction Devices (SID)is proposed and designed. This structural devices exhibit typical I-V characteristics and electrical performance, which are the same as those for the surface-gate and buried-gate types of SID. The experiment results indicate that C-S may be adopted as one of basic structures of SID. A prominent merit of C-S is that only ordinary planar technology is used to fabricate the SID.

Key words: static induction devices, complex structure, I-V characteristics