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应用科学学报 ›› 1983, Vol. 1 ›› Issue (1): 71-76.

• 论文 • 上一篇    下一篇

lμm MESFET/SOS集成电路制备及液氮温度下器件的工作特性

沈国雄1, 赵鹏程2   

  1. 1. 中国科学院上海冶金研究所;
    2. 美国Cornell大学
  • 收稿日期:1981-12-19 出版日期:1983-03-31 发布日期:1983-03-31

MESFET/SOS IC FABRICATION AND DEVICE CHARACTERISTICS AT LIQUID NITROGEN TEMPERATURE

SHEN GUOXIONG1, ZHAO PENGCHENG2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Cornell University
  • Received:1981-12-19 Online:1983-03-31 Published:1983-03-31

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摘要： 本文介绍的MESFET/SOS微波差分放大器是在蓝宝石衬底上硅外延薄膜内制备的.该电路特征线宽为1μm,制备工艺简单,仅需三块掩模,应用全离子工艺,具有足够小的漂移电压和失调电流.由于采用蓝宝石为衬底,大大减小了寄生电容,从而获得高的频率特性.

Abstract: In this paper, fabrication of a MESFET/SOS microwave differential amplifier is described. The full ion implantation technique is applied. Only three masks are needed to simplify the processes.
The D. C. and microwave properties for MESFET/SOS devices at room temperature and liquid nitrogen temperature (i. e. 77K) are also investigated.