Abstract: Experimental results indicate that for the crystalline silicon substrates with basically the same resistivity the lowering of the impurity compensation ratio can effectively raise the breakdown voltage and the end product ratio of the transistor. The empiric formula, which expresses the dependence of the maximum breakdown voltage of the transistors made in a single N-Si wafer on the impurity compensation ratio, is obtained from the experiment. A preliminary analysis is also obtained here.

Key words: maximum electric field in junction depletion layer, avalanche breakdown, impurity compensation ratio