Abstract: The principle of designing silicon photovoltage measured cells is discussed The effect of impurities, junction depth and surface recombination on the main parameters are also discussed. The main parameters are open-circuit voltage, short-circuit current, spectrum response and dark current. For application sake, the effects of series and shunt resistances on the linearity of the cell are analysed. In the last part of this paper, the mathematical model of temperature effect and the relationship between shunt resistance and the typical circuit design are demonstrated.

Key words: photovoltage cell, spectrum response, temperature effect, linearity of cell