Abstract: The enhanced adhesion of In, Sn, Al, Pd, Cu and Ni films on Teflon substrates under 6 MeV F ion irradiation was studied. The adhesion threshold doses for the films were measured using the Scotch tape test and found to be proportional to the ratio of the film material modulus of elasticity to the electronic stopping power. A possible mechanism of enhanced adhesion is presented based on our experiments. Thus some phenomena in the ion beam enhanced adhesion area, which have not been understood before, are explained, using this mechanism.

Key words: threshold dose, enhanced adhesion, film, stress