Abstract: The intrinsic gettering effectiveness in heavily arsenic-doped silicon has been investigated. It has been shown that the quality of epitaxial layers is improved by the intrinsic gettering process. The generation lifetime has increased by more than 15 times, and the diode reverse leakage current has been improved by two to three orders of magnitude.
Furthermore,the results indicate that the intrinsic gettering effect can perform in a longer distance than the extrinsic gettering effect by heavy boron diffusion.