Journal of Applied Sciences ›› 1985, Vol. 3 ›› Issue (3): 274-276.
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YANG JINGRAN, WANG LIANJIE
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Abstract: Atomic vapor produced by pulsed Nd:YAP laser with, its beam focused on a silicon wafer has been used to deposit silicon film on substrate at room temperature.A 300~400 us pulsed Nd:YAP laser was used to vaporize a high-purity silicon wafer contained in an evacuated cell. The laser energy at 1.075μm was 8J per pulse.
YANG JINGRAN, WANG LIANJIE. LASER-INDUCED VAPOR DEPOSITION OF SILICON USING A PULSED Nd:YAP LASER[J]. Journal of Applied Sciences, 1985, 3(3): 274-276.
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https://www.jas.shu.edu.cn/EN/Y1985/V3/I3/274
