| [1] Nagatomo T, Maruta Y, Omoto O. Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility[J]. Thin Solid Films, 1990, 192(1):17-25.[2] Weijtens C H L, van Loon P A C. Influence of annealing on the optical properties of indium tin oxide[J]. Thin Solid Films, 1991, 196(1):1-10.[3] Lee C, Ahn J, Lee K B, Kim, D, Kim, J. Graphene-based flexible NO2 chemical sensors[J]. Thin Solid Films, 2012, 520(16):5459-5462.[4] Gleskova H, Cheng I C, Wagner S, Sturm J C, Suo Z. Mechanics of thin-film transistors and solar cells on flexible substrates[J]. Solar Energy, 2006, 80(6):687-693.[5] Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Y E P, Janes D B. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics[J]. Nature Nanotechnology, 2007, 2(6):378-384.[6] Sekitani T, Nakajima H, Maeda H, Fukushima T, Aida T, Hata K, Someya T. Stretchable active-matrix organic light-emitting diode display using printable elastic conductors[J]. Nature Materials, 2009, 8(6):494-499.[7] Khrapach I,Withers F, Bointon T H, Polyushkin D K, BarnesWL, Russo S, Craciun M F. Novel highly conductive and transparent graphene-based conductors[J]. Advanced Materials, 2012, 24(21):2844-2849.[8] Rogala M, Wlasny I, Dabrowski P, Kowalczyk P J, Busiakiewicz A, Kozlowski W, Krajewska A. Graphene oxide overprints for flexible and transparent electronics[J]. Applied Physics Letters, 2015, 106(4):041901.[9] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S A, Firsov A A. Electric field effect in atomically thin carbon films[J]. Science, 2004, 306(5696):666-669.[10] Chae S J, Günes F, Kim K K, Kim E S, Han G H, Kim S M, Yang C W. Synthesis of largearea graphene layers on Nickel film by chemical vapor deposition:wrinkle formation[C]//SPIE NanoScience+ Engineering. International Society for Optics and Photonics, 2009:73990W-73990W-11.[11] Neto A H C, Guinea F, Peres N M R, Novoselov K S, Geim A K. The electronic properties of graphene[J]. Reviews of Modern Physics, 2009, 81(1):109.[12] Lee Y H, Lee J H. Scalable growth of free-standing graphene wafers with copper (Cu) catalyst on SiO2/Si substrate:thermal conductivity of the wafers[J]. Applied Physics Letters, 2010, 96(8):083101.[13] Xu K, Wang K, Zhao W, Bao W, Liu E, Ren Y, Zhou W. The positive piezoconductive effect in graphene[J]. Nature Communications, 2015, 6.[14] 韦勇,童国平. 拉伸作用对单层石墨片电子能隙的影响[J]. 物理学报,2009(3):1931-1935. Wei Y, Tong G P. Effect of the tensile force on the electronic energy gap of graphene sheet[J]. Acta Physica Sinica, 2009(3):1931-1935. (in Chinese)[15] Gui G, Li J, Zhong J X. Band structure engineering of graphene by strain:first-principles calculations[J]. Physical Review B, 2008, 78(7):075435.[16] Chen Y Z, Medina H, Tsai H W, Wang Y C, Yen Y T, Manikandan A, Chueh Y L. Low temperature growth of graphene on glass by carbon-enclosed chemical vapor deposition process and its application as transparent electrode[J]. Chemistry of Materials, 2015, 27(5):1646-1655.[17] Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Geim A K. Raman spectrum of graphene and graphene layers[J]. Physical Review Letters, 2006, 97(18):187401.[18] Fu X W, Liao Z M, Zhou J X, Zhou Y B,Wu H C, Zhang R, Yu D. Strain dependent resistance in chemical vapor deposition grown graphene[J]. Applied Physics Letters, 2011, 99(21):213107.[19] Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Hong B H. Large-scale pattern growth of graphene films for stretchable transparent electrodes[J]. Nature, 2009, 457(7230):706-710.[20] Bae S H, Lee Y, Sharma B K, Lee H J, Kim J H, Ahn J H. Graphene-based transparent strain sensor[J]. Carbon, 2013, 51:236-242.[21] Zhao J, He C, Yang R, Shi Z, Cheng M, Yang W, Zhang G. Ultra-sensitive strain sensors based on piezoresistive nanographene films[J]. Applied Physics Letters, 2012, 101(6):063112. |
