Journal of Applied Sciences ›› 1994, Vol. 12 ›› Issue (4): 379-386.

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PHOTOELECTREC IMAGING OF SEMICONDUCTOR P-N JUNCTIONS

GUO LIANG1, ZHANG ZHONGNING1, ZHANG SHUYI1, XIE YUN2   

  1. 1. Nanjing University;
    2. Jiangsu Institute of Labour Protection
  • Received:1992-07-06 Revised:1993-04-01 Online:1994-12-31 Published:1994-12-31

Abstract: The results of the photovoltaic detection of P-N junctions with different bias voltages under the illumination of periodically modulated laser are presented in experiment and theory. The static and dynamic photovoltaic images of semiconductor P-N junction devices are obtained by photoelectric microscopy.The studies of the phybsical mechanism of the photovoltaic detection of semicon-ductor P-N junctions provide effectively the analytical foundations of the static and dynamic photovoltaic images of integrated circuits.

Key words: semiconduetor P-N junctions, photoelectric effect, photoelectic imaging