Journal of Applied Sciences ›› 2005, Vol. 23 ›› Issue (4): 380-383.
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ZHANG Jun, CHENG Dong-fang, XU Zhi-ping
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Abstract: In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.Due to the resistance distribution of Rj and Rch in the device, carriers' drift velocity in MOS channel changes from saturation to unsaturation while the carriers' drift velocity in the autoecious JFET channel changes from unsaturation to saturation.When the device is in high VGS, IDS is independent of VGS, resulting in the quasi-saturation effect.
Key words: on-resistance, VDMOS, quasi-saturation effect
CLC Number:
TN386
ZHANG Jun, CHENG Dong-fang, XU Zhi-ping. Investigation of Quasi-saturation Effect in Small Size Power VDMOS[J]. Journal of Applied Sciences, 2005, 23(4): 380-383.
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https://www.jas.shu.edu.cn/EN/Y2005/V23/I4/380
