Abstract: In this paper, the dependence of anisotropic silicon etching on bias-voltage and the influence of heavy doping are studied in detail. Two models of liquid-semiconductor contact energy band and transport of interface changes are set up. The concept of reaction implantation is put forward. Meanwhile, it is considered that the etching rate usually depends on the filling conditions of the interface state. The relations of experimental etching rate and bias-voltage are explained correctly. Finally, after considering the recombination of disequilibrium carriers, the etching rate carrier concentration formula is found to be in good agreement with experimental data.

Key words: anisotropio silicon etching, liquid-semiconduotor contact, reaction implanbation, interface state filling