中文

Journal of Applied Sciences ›› 1997, Vol. 15 ›› Issue (2): 143-148.

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THE ELEMENTS OF OXIDE CONDITION WHICH INFLUENCE THE ELECTRET PROPERTIES OF THE THERMALLY WET-GROWN SiO2 FILMS

LIN HUAMAO1, XIA ZHONGFU1, SHEN SHAOQUN2   

  1. 1. Tongji University, Shanghai 200092;
    2. Fudan University, Shanghai 200433
  • Received:1995-07-26 Revised:1996-04-26 Online:1997-06-30 Published:1997-06-30

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Abstract: The structures of the SiO2 films and the distribution of the energy levels in the SiO2 films, which influences the stability of the space charges stored in the samples, are directly determined by the oxide condition. In this paper, the samples are produced by several oxide conditions. The stability of the space charges stored In the SiO2 films are investigated by using surface potential decay measurement.The activation energies of detrapping charges in the samples are estimated by using Thermally Stimulated Discharge (TSD) method. And the density of the sodium ions in the samples are determined by Capacitance-Voltage (C-V) Analyses technique. Based on these results, the inherent relationship between the stability of the space charges and the oxide condition is analyzed.

Key words: electret, SiO2, oxide condition