中文

Journal of Applied Sciences ›› 1997, Vol. 15 ›› Issue (2): 187-192.

• Articles • Previous Articles     Next Articles

THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS

ZHANG ZHIGUO1, SU CHANGHOU2   

  1. 1. Department of Automation, Electric Power College Inner Mongoulia Polytechnic University, hohhot, 010080;
    2. Beijing Polytechnic University Beijing, 100022
  • Received:1995-04-06 Revised:1996-06-09 Online:1997-06-30 Published:1997-06-30

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Abstract: An experiment technique is introduced to modulate the neutral bulk region of M/a-Si:H system with light, and to measure the barrier characteristics of M/a-Si:H junction with high frequency C-V meter. The results obtained and available data from literatures arc compared. With much emphasis, the unusual phenomenon in Al/a-Si:H structure is described.

Key words: M/a-Si:H barrier, photoconductive modulation, C-V characteristics