Abstract:

A novel backside contact dual pH-ISFET structure with its microreference electrode which can be completely isolated from other sensitive elemcnts and signal conditioning circuits is presented in this paper.Based on the silicon bonding method, silicon micromechanical technique and standard N-well biMOS compatible process,an integrated pressure/pH-ISFET sensor is developed.A highly stsble Chip-Temperature-Constant system is also designed and developed.Measurement prove;the possibility of the new structure and good characteristics of the sensor.

Key words: Pressure, Integrated Sensor, backside contact, microreference electrode, pH-ISFET