Journal of Applied Sciences ›› 1990, Vol. 8 ›› Issue (2): 95-102.
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WANG GUANGYU
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Abstract: Prof. Zou Yuanxi had explored the nature of some native derects in compound semiconductors by means of physicochemical method over 20 years. We sincerely introduce his science ideas and profound fruits in the identification of EL2 (the most important deep level in GaAs) in this paper,and express to cherish our deep memory of him.
WANG GUANGYU. “ZOU MODEL” OF EL2 DEFECT IN GaAs in memory of Prof. Zou Yuanxi[J]. Journal of Applied Sciences, 1990, 8(2): 95-102.
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https://www.jas.shu.edu.cn/EN/Y1990/V8/I2/95