中文

Journal of Applied Sciences ›› 1985, Vol. 3 ›› Issue (2): 161-168.

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MICROWAVE PARAMETER MEASUREMENTS FOR GaAs DUAL-GATE MESFET

YANG XINMIN1, WANG WEIYUAN1, WANG WENQI2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Shanghai University of Science and Technology, Branch
  • Received:1982-02-08 Revised:1982-07-27 Online:1985-06-30 Published:1985-06-30

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Abstract: The microwave parameters minimum noise figure NFmin associated gain Ga and gain reduction GR of a low noise GaAs dual-gate MESFET for UHF applications were measured by means of the mid-frequency attenuation method in microstrip test circuits. The S parameters were measured by means of network analyser. From the experimental data, the best noise figure NF0 of 0.8dB was obtained. The Ga and GR amounted to 11.5dB and 48dB, respectively. It was shown by S parameters that the dual-gate MESFET was stable over 0.5-2GHz.