Journal of Applied Sciences ›› 1983, Vol. 1 ›› Issue (1): 63-70.

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APPLICATIONS OF SCANNING ELECTRON MICROSCOPE IN EXAMINATION OF INFRARED DETECTOR MATERIALS

CHEN BOLIANG, YU JINBI, DIN SUZHEN, WANG XINGFENG   

  1. Shanghai Institute of Technical Physics, Academia Sinica
  • Received:1981-09-30 Online:1983-03-31 Published:1983-03-31

Abstract: In this paper some results from examining infrared detector materials using scanning electron microscope of type DX-3A (manufactured in China) are reported. Te-rich inclusions in HgCdTe and metal inclusions in PbSnTe have been detected successfully, the smallest dimension of which is ten micrometers. Precision determination of compositions of Hg1-xCdxTe and Pb1-xSnxTe crystals is made, and inho-mogeneity of △x/x>2% in a crystal wafer can be discriminated. The thieknees of hetero-epitaxial layer of PbSnTe-PbTe can also be determined.