Abstract: A correlation between the calculated concentrations of shallow donor (N_D) and total acceptor (N_A) in InAs is deducod on the basis of the published data. It is shown that the data for bulk, VPE and LPE materials can be expressed by a single N_D versus N_A curve. This result leads to a reasonable inference that the total concentration of impurities Si, Cu, Na (K)， S (Se, Te) and perhaps also G, could be responsible for the residual donor concentration in InAs.