Communication Engineering

Optical Fiber Memory Based on Phase Change Material Ge2Sb2Te5

Expand
  • Key Laboratory of In-Fiber Integrated Optics, Ministry of Education, Harbin Engineering University, Harbin 150001, Heilongjiang, China

Received date: 2023-02-15

  Online published: 2023-09-28

Abstract

The typical functions of optical fiber are communication and sensing, this paper gives the function of optical fiber storage and designs an all-fiber memory to meet the needs of intelligent development of optical fiber communication systems. In this paper, single-mode fiber (SMF) and multimode fiber (MMF) are used to coaxial soldering, and Ge2Sb2Te5 (GST) material is deposited on the end face of MMF by the magnetron sputtering method, then the end face will emit the Bessel-like beam that can switch the phase state of GST, the length of MMF affects the end face light field, and finally 1.5 mm long MMF is selected to achieve non-volatile memory with arbitrary level access ability, high optical contrast, good stability, and high repeatability. The memory can realize 11 levels of storage randomly and stably, with an optical contrast of 50% and repeated cycles at least 34 times.

Cite this article

YIN Jiayue, CHENG Siying, LOU Cunkai, YANG Bozhi, ZHANG Yu . Optical Fiber Memory Based on Phase Change Material Ge2Sb2Te5[J]. Journal of Applied Sciences, 2023 , 41(5) : 727 -737 . DOI: 10.3969/j.issn.0255-8297.2023.05.001

References

[1] 谈仲纬, 吕超. 光纤通信技术发展现状与展望[J]. 中国工程科学, 2020, 22(3):100-107. Tan Z W, Lyu C. Optical fiber communication technology:present status and prospect[J]. Strategic Study of CAE, 2020, 22(3):100-107. (in Chinese)
[2] Wang D W, Sui Q, Li Z H. Toward universal optical performance monitoring for intelligent optical fiber communication networks[J]. IEEE Communications Magazine, 2020, 58(9):54-59.
[3] Iovanna P, Cavaliere F, Stracca S, et al. 5G xHaul and service convergence:transmission, switching and automation enabling technologies[J]. Journal of Lightwave Technology, 2020, 38(10):2798-2805.
[4] Wellbrock G, Wang T, Ishida O. New paradigms in optical communications and networks[J]. IEEE Communications Magazine, 2013, 51(3):22-23.
[5] Naghshvarianjahromi M, Kumar S, Deen M J. Smart long-haul fiber optic communication systems using brain-like intelligence[C]//2019 16th Canadian Workshop on Information Theory (CWIT), 2019:1-6.
[6] Hill M, Dorren H, De Vries T, et al. A fast low-power optical memory based on coupled micro-ring lasers[J]. Nature, 2004, 432(7014):206-209.
[7] Pleros N, Apostolopoulos D, Petrantonakis D, et al. Optical static RAM cell[J]. IEEE Photonics Technology Letters, 2009, 21(2):73-75.
[8] Vagionas C, Fitsios D, Kanellos G T, et al. Optical RAM and flip-flops using bit-input wavelength diversity and SOA-XGM switches[J]. Journal of Lightwave Technology, 2012, 30(18):3003-3009.
[9] Berrettini G, Poti L, Bogoni A. Optical dynamic RAM for all-optical digital processing[J]. IEEE Photonics Technology Letters, 2011, 23(11):685-687.
[10] Bakopoulos P, Vyrsokinos K, Fitsios D, et al. All-optical T-flip-flop using a single SOAMZI-based latching element[J]. IEEE Photonics Technology Letters, 2012, 24(9):748-750.
[11] Naito Y, Shimizu S, Kato T, et al. Investigation of all-optical latching operation of a monolithically integrated SOA-MZI with a feedback loop[J]. Optics Express, 2012, 20(26):B339-B349.
[12] Chen C H, Matsuo S, Nozaki K, et al. All-optical memory based on injection-locking bistability in photonic crystal lasers[J]. Optics Express, 2011, 19(4):3387-3395.
[13] Fitsios D. Alexoudi T, Bazin A, et al. Ultra-compact III-V-on-Si photonic crystal memory for flip-flop operation at 5 Gb/s[J]. Optics Express, 2016, 24(4):4270-4277.
[14] Katayama T, Ooi T, Kawaguchi H. Experimental demonstration of multi-bit optical buffer memory using 1.55-polarization bistable vertical-cavity surface-emitting lasers[J]. IEEE Journal of Quantum Electronics, 2009, 45(11):1495-1504.
[15] Ríos C, Stegmaier M, Hosseini P, et al. Integrated all-photonic non-volatile multi-level memory[J]. Nature Photonics, 2015, 9(11):725-732.
[16] Cheng Z, Ríos C, Youngblood N, et al. Device-level photonic memories and logic applications using phase-change materials[J]. Advanced Materials, 2018, 30(32):1802435.
[17] Miller K J, Haglund R F, Weiss S M. Optical phase change materials in integrated silicon photonic devices:review[J]. Optical Materials Express, 2018, 8(8):2415-2429.
[18] Nisar M S, Yang X, Lu L J, et al. On-chip integrated photonic devices based on phase change materials[J]. Photonics, 2021, 8(6):205.
[19] Zou C, Zheng J J, Chang C, et al. Nonvolatile rewritable photomemory arrays based on reversible phase-change perovskite for optical information storage[J]. Advanced Optical Materials, 2019, 7(18):1900558.
[20] Jung Y, Han H, Sharma A, et al. Integrated hybrid VO2-silicon optical memory[J]. ACS Photonics, 2022, 9(1):217-223.
[21] Youngblood N, Ríos C, Gemo E, et al. Tunable volatility of Ge2Sb2Te5 in integrated photonics[J]. Advanced Functional Materials, 2019, 29(11):1807571.
[22] Marchetti R, Lacava C, Carroll L, et al. Coupling strategies for silicon photonics integrated chips[J]. Photonics Research, 2019, 7(2):201-239.
[23] Duan R, Sun J P, Zhang Y, et al. A non-volatile quasi-continuous all-optical fiber programmable platform based on GST-coated microspheres[J]. ACS Photonics, 2022, 9(4):1180-1187.
[24] Liu Z H, Cheng S Y, Zhang Y, et al. Intelligent all-fiber device:storage and logic computing[J]. Photonics Research, 2022, 10(2):357-363.
[25] Zhu X, Schülzgen A, Li H, et al. Detailed investigation of self-imaging in largecore multimode optical fibers for application in fiber lasers and amplifiers[J]. Optics Express, 2008, 16(21):16632-16645.
[26] Lotnyk A, Behrens M K, Rauschenbach B. Phase change thin films for non-volatile memory applications[J]. Nanoscale Advances, 2019, 1:3836-3857.
[27] Chen Y, Li X, Sonnefraud Y, et al. Engineering the phase front of light with phase-change material based planar lenses[J]. Scientific Reports, 2015, 5:8660.
[28] 曲帅杰, 郭朝乾, 代明江, 等. 物理气相沉积中等离子体参数表征的研究进展[J]. 表面技术, 2021, 50(10):140-146, 185. Qu S J, Guo C Q, Dai M J, et al. Research progress of plasma parameter characterization in physical vapor deposition[J]. Surface Technology, 2021, 50(10):140-146, 185. (in Chinese)
[29] Zhang H Y, Zhou L J, Xu J, et al. All-optical non-volatile tuning of an AMZI-coupled ring resonator with GST phase-change material[J]. Optics Letters, 2018, 43(22):5539-5542.
[30] Alexoudi T, Kanellos G T, Pleros N. Optical RAM and integrated optical memories:a survey[J]. Light, Science & Applications, 2020, 9(1):1117-1132.
[31] Li X, Youngblood N, Ríos C, et al. Fast and reliable storage using a 5 bit, nonvolatile photonic memory cell[J]. Optica, 2019, 6(1):1-6.
[32] Wuttig M, Bhaskaran H, Taubner T. Phase-change materials for non-volatile photonic applications[J]. Nature Photonics, 2017, 11(8):465-476.
Outlines

/