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应用科学学报 ›› 1983, Vol. 1 ›› Issue (2): 107-110.

• 论文 • 上一篇    下一篇

砷化铟中的剩余施主和高纯砷化铟晶体的生长Ⅰ.砷化铟的浅施主——总受主关系和剩余施主本性的推测

邹元爔   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-04-14 出版日期:1983-06-30 发布日期:1983-06-30

GROWTH OF HIGH PURITY InAs CRYSTALS AND A DISCUSSION ON THE RESIDUAL DONORS I.Relationship Between the Concentrations of Shallow Donor and Total Acceptor and a Speculation About the Nature of Residual Donor in InAs

ZOU YUANXI   

  1. Shanghai Institute of metallurgy, Aoademia Sinica
  • Received:1982-04-14 Online:1983-06-30 Published:1983-06-30

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91

被引次数

2

摘要： 本文根据文献数据推导出InAs的浅施主ND对总受主NA的关系曲线,发现体单晶、气相和液相外延三种材料的数据能用一条曲线来表示.因此推测InAs体材料中的剩余施主应以化学杂质为主.

Abstract: A correlation between the calculated concentrations of shallow donor (ND) and total acceptor (NA) in InAs is deducod on the basis of the published data. It is shown that the data for bulk, VPE and LPE materials can be expressed by a single ND versus NA curve. This result leads to a reasonable inference that the total concentration of impurities Si, Cu, Na (K)， S (Se, Te) and perhaps also G, could be responsible for the residual donor concentration in InAs.