In1-xGaxAsyP1-y-InP异质结界面组分过渡层的俄歇电子能谱研究

应用科学学报 ›› 1983, Vol. 1 ›› Issue (4): 327-336.

In_1-xGa_xAs_yP_1-y-InP异质结界面组分过渡层的俄歇电子能谱研究

李明第¹, 龚小成¹, 朱礽沐¹, 陈益新¹, 徐信慧²

1. 上海交通大学;
2. 上海有色金属研究所

收稿日期:1982-06-30 出版日期:1983-12-31 发布日期:1983-12-31

AES STUDY OF THE COMPOSITIONAL TRANSITION LAYER IN In_1-xGa_xAs_yP_1-y-InP HETEROJUNCTION INTERFACE

LI MINGDI¹, GONG XIAOCHENG¹, ZHU RENGMU¹, CHEN YIXIN¹, XU XINHUI²

1. Shanghai Jiaotong University;
2. Shanghai Nonferrous Metal Institute

Received:1982-06-30 Online:1983-12-31 Published:1983-12-31

摘要/Abstract

摘要： 用俄歇电子能谱研究了由两相过冷溶液法液相外延生长的In_1-xGa_xAs_yP_1-y-InP单异质结.四元层初始生长温度在631℃至641℃范围内变化;降温速率在0.7/~1.2℃/分之间变化.层厚小于0.5μm的薄四元层内各组分的原子百分浓度不随深度而变,即不存在组分梯度.异质结界面组分过渡层内P组分的原子百分浓度C_p(Z)随深度Z的变化,可用一双曲正切函数的经验公式表达.

Abstract: AES (Auger Electron Speotroscopy) was used to study the composition depth profile of In_1-xGa_xAs_yP_1-y-InP single heteroju notion fabricated by two-phase supercooling LPE (Liquid Phase epitaxy) method. The variation in initial growth tem perature of the quaternary layer covers the range of 631℃~641℃ and the cooling rate varied from 0.7℃/min to 1.2℃/min. It has been realized that the atom concentration in percent of each composition of the thin quaternary layer, whereof the thickness is less than 0.5μm, does not vary with the depth Z. The atom concentration in percent of phosphorus C_P (Z) in the compositional transition layerof the heterojunction interface versus the depth Z can be formulated experimentally as a hyperbolic tangent function.

李明第, 龚小成, 朱礽沐, 陈益新, 徐信慧. In_1-xGa_xAs_yP_1-y-InP异质结界面组分过渡层的俄歇电子能谱研究[J]. 应用科学学报, 1983, 1(4): 327-336.

LI MINGDI, GONG XIAOCHENG, ZHU RENGMU, CHEN YIXIN, XU XINHUI. AES STUDY OF THE COMPOSITIONAL TRANSITION LAYER IN In_1-xGa_xAs_yP_1-y-InP HETEROJUNCTION INTERFACE[J]. Journal of Applied Sciences, 1983, 1(4): 327-336.