English

应用科学学报 ›› 1983, Vol. 1 ›› Issue (4): 345-352.

• 论文 • 上一篇    下一篇

磷砷化镓中氮和氧引起的深能级

周继程, 乔墉, 孙义林, 沈德新, 徐晨梅   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-04-27 出版日期:1983-12-31 发布日期:1983-12-31

NITROGEN AND OXYGEN INDUCED DEEP LEVELS IN GaAs1-xPx

ZHOU JICHRNG, QIAO YONG, SUN YILIK, SHEN DEXIK, XU GHENMEI   

  1. Shanghai Institute of Metallurgy, Academia, Sinica 865 Chang Xing Road, Shanghai 200050, China
  • Received:1982-04-27 Online:1983-12-31 Published:1983-12-31

PDF

65

被引次数

4

摘要： 用离子注入技术对磷砷化镓进行了掺氮,给出了组分在0.175 ≤ x ≤ <0.8间氮能级随组分变化的方程式.

Abstract: The ion-implantation technique was used for introducing nitrogen into GaAs1-xPx with or without oxygen. The dependence of nitrogen energy levels of close-spaced epitaxially grown GaAs1-xPx (with oxygon) on composition can be represented by an "abnormal" curve as compared with data reported in the literature. The relationship between composition X and nitrogen energy levels in VPE GaAs1-xPx (without oxygen) grown under phosphorous pressures can be expressed as.