硅全离子注入的GaAs双栅MESFET

应用科学学报 ›› 1983, Vol. 1 ›› Issue (4): 361-368.

硅全离子注入的GaAs双栅MESFET

王渭源¹, 卢建国¹, 乔墉¹, 周永泉¹, 夏冠群¹, 邵永富¹, 杨新民¹, 陈自姚¹, 罗潮渭¹, 詹千宝¹, 王文骐²

1. 中国科学院上海冶金研究所;
2. 上海科技大学分部

收稿日期:1982-02-08 修回日期:1982-03-23 出版日期:1983-12-31 发布日期:1983-12-31

A MODIFIED HONIZONTAL GARADIENT-FREEZE APPREACH TO THE GROWTH OF FULLY SILICON-IMPLATED GaAs DUAL-GATE MESFET

WANG WEIYUAN¹, LU JIANGUO¹, QIAO YONG¹, ZHOU YONGQUAN¹, XIA GUANQUN¹, SHAO YONGFU¹, YAN XINMIN¹, CHEN ZIYAO¹, LUO CHAOWEI¹, ZAN QIANBAO¹, WANG WENQI²

1. Shanghai Institute of Metallurgy, Academia Sinica;
2. Shanghai University of Science and Technology, Branch

Received:1982-02-08 Revised:1982-03-23 Online:1983-12-31 Published:1983-12-31

摘要/Abstract

摘要： 本文研究了硅全离子注入的平面型GaAs双栅MESFET.有源层注入条件为110ke V、3.5×10¹²cm^-2,接触层注入条件为50keV、8×10¹²cm^-2,退火条件为800℃30分钟.FET的铝栅1.5×300μm,Au-Ge-Ni为欧姆接触.

王渭源, 卢建国, 乔墉, 周永泉, 夏冠群, 邵永富, 杨新民, 陈自姚, 罗潮渭, 詹千宝, 王文骐. 硅全离子注入的GaAs双栅MESFET[J]. 应用科学学报, 1983, 1(4): 361-368.

WANG WEIYUAN, LU JIANGUO, QIAO YONG, ZHOU YONGQUAN, XIA GUANQUN, SHAO YONGFU, YAN XINMIN, CHEN ZIYAO, LUO CHAOWEI, ZAN QIANBAO, WANG WENQI. A MODIFIED HONIZONTAL GARADIENT-FREEZE APPREACH TO THE GROWTH OF FULLY SILICON-IMPLATED GaAs DUAL-GATE MESFET[J]. Journal of Applied Sciences, 1983, 1(4): 361-368.