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应用科学学报 ›› 1983, Vol. 1 ›› Issue (4): 376-378.

• 论文 • 上一篇    下一篇

InSb中复合中心本性的推测

孙清1, 邹元爔2, 施惠英2   

  1. 1. 上海科学技术大学;
    2. 中国科学院上海冶金研究所
  • 收稿日期:1982-09-27 出版日期:1983-12-31 发布日期:1983-12-31

A SPECULATION ABOUT THE NATURE OF RECOMBINATION CENTERS IN InSb

SUN QING1, ZOU YUANXI2, SHI HUIYING2   

  1. 1. Shanghai University of Science and Technology;
    2. Shanghai Institute of Metallurgy, Acadamia Sinica
  • Received:1982-09-27 Online:1983-12-31 Published:1983-12-31

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62

被引次数

2

摘要： 尽管人们对InSb已进行了大量的研究,但至今仍有一些问题尚未解决,两个对载流子寿命可能有显著影响的复合中心问题就是其中之一.

Abstract: In this article, the probable nature of the two recombination centers commonly found in InSb (Ev + 0.071eV, Ev + 0.11eV) is discussed. By assuming some interactions among defects and impurities in InSb, it is postulated that the defects VInOiVIn and SbIn could tentatively be assigned to the said centers respectiuely.