一种提高SOS膜结晶质量的新途径

应用科学学报 ›› 1985, Vol. 3 ›› Issue (3): 262-266.

一种提高SOS膜结晶质量的新途径

陈庆贵¹, 史日华¹, 蔡希介¹, 武蕴忠¹, 孙成龙¹, 潘尧令²

1. 中国科学院上海冶金研究所;
2. 上海科学技术大学

收稿日期:1982-09-01 修回日期:1982-11-08 出版日期:1985-09-30 发布日期:1985-09-30

A NEW WAY FOR IMPROVING THE CRYSTALLINE QUALITY OF SOS FILMS

CHEN QINGGUI¹, SHI RIHUA¹, CAI XIJIE¹, WU YUNGZHONG¹, SUN OHENGLONG¹, PAN YAOLING²

1. Shanghai Institute of Metallurgy, Academia Sinica;
2. Shanghai University of Science and Technology

Received:1982-09-01 Revised:1982-11-08 Online:1985-09-30 Published:1985-09-30

摘要/Abstract

摘要： 这是一种提高SOS膜结晶质量的新方法.这种方法包括三步:1)在蓝宝石衬底上先用电子束蒸发薄无定形硅保护层.2)然后在氢气中进行退火处理.3)再用通常CVD方法在带薄硅层上外延生长所需厚度(0.6~0.8μm)的SOS膜.对所得SOS膜进行电子衍射、Nomarski相衬干涉显微镜表面观察、载流子浓度测量和光吸收研究表明:SOS膜质量完好,光吸收因子F_A ≤ 140×10⁶cm^-2,抑制了自掺杂,载流子浓度不超过1×10¹³cm^-3.

Abstract: In this paper, a new method for improving the crystalline quality of SOS films is developed.lt consists of three steps:(1) A thin amorphous silicon layer is prepared by electron beam evaporation. (2) The wafer is annealed in a hydrogen atmosphere. (3) The required thickness (0.6-0.8μm) of SOS film is deposited by the standard OVD method on the thin silicon layer. The resulting SOS films are examined by reflection electron diffraction, Nomarski phase interference microscopy, carrier concentration measurement and optical absorption measurement. The results show that the crystalline perfection of the film is good,the optical absorption factor F_A ≤ 140×10⁶cm^-2. The autodoping is expressed and the carrier concentration is lower than 1×10¹³cm^-3.

陈庆贵, 史日华, 蔡希介, 武蕴忠, 孙成龙, 潘尧令. 一种提高SOS膜结晶质量的新途径[J]. 应用科学学报, 1985, 3(3): 262-266.

CHEN QINGGUI, SHI RIHUA, CAI XIJIE, WU YUNGZHONG, SUN OHENGLONG, PAN YAOLING. A NEW WAY FOR IMPROVING THE CRYSTALLINE QUALITY OF SOS FILMS[J]. Journal of Applied Sciences, 1985, 3(3): 262-266.