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应用科学学报 ›› 1985, Vol. 3 ›› Issue (3): 274-276.

• 论文 • 上一篇    下一篇

用Nd:YAP激光器诱导蒸气沉积硅薄膜

杨静然, 王连杰   

  1. 中国科学院长春应用化学研究所
  • 收稿日期:1982-08-03 修回日期:1984-04-27 出版日期:1985-09-30 发布日期:1985-09-30

LASER-INDUCED VAPOR DEPOSITION OF SILICON USING A PULSED Nd:YAP LASER

YANG JINGRAN, WANG LIANJIE   

  1. Changchun Institute of Applied Chemistry. Academic, Sinica
  • Received:1982-08-03 Revised:1984-04-27 Online:1985-09-30 Published:1985-09-30

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摘要： 在室温条件下用脉冲Nd:YAP激光器将光束聚焦在硅片上,使硅原子蒸气在不同基板上沉积成膜.激光器脉宽为300~400微秒,长脉冲经一级放大后在1.075μm波段的能量为每个脉冲8焦尔.蒸发池子用一台机械泵抽到真空度1×1-2乇,用石英或玻璃作窗口.沉积的薄膜具有银灰色光泽.用X射线衍射和金相显微分析法证明所获得的是多晶硅薄膜.

Abstract: Atomic vapor produced by pulsed Nd:YAP laser with, its beam focused on a silicon wafer has been used to deposit silicon film on substrate at room temperature.
A 300~400 us pulsed Nd:YAP laser was used to vaporize a high-purity silicon wafer contained in an evacuated cell. The laser energy at 1.075μm was 8J per pulse.