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应用科学学报 ›› 1985, Vol. 3 ›› Issue (4): 373-376.

• 论文 • 上一篇    

SOS膜载流子迁移率的纵向分布

王缨1, 陈庆贵1, 史日华1, 史常忻2   

  1. 1. 中国科学院上海冶金研究所;
    2. 上海交通大学
  • 收稿日期:1982-11-08 修回日期:1983-10-09 出版日期:1985-12-31 发布日期:1985-12-31

IN-DEPTH DISTRIBUTION OF CARRIER MOBILITY IN SOS FILMS

WANG YING1, CHEN QINGGUI1, SHI RIHUA1, SHI CHANGXIN2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Soanghai Jiaotong University
  • Received:1982-11-08 Revised:1983-10-09 Online:1985-12-31 Published:1985-12-31

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52

被引次数

2

摘要： 对于MOS器件,由于器件的跨导正比于载流子迁移率,因而迁移率(μ)是个首要的因素.SOS膜的载流子除受一般离子散射外还受异质外延所特有的散射而使其迁移率下降.

Abstract: In-depth distribution of carrier mobility can be obtained by measuring the gate capacitance and the transconductance of deep-depletion SOS/MOSFET in linear region as a function of gate bias voltages. The defect scattering mobility can be expressed as μEP=μ0e-αx0, where μ0 and α are two constants characterizing the crystalline quality and the indepth change of defect density with distance x0 in SOS film respectively. The effect of growth technology and substrate surface quality on μ0 and α values have been described.