English

应用科学学报 ›› 1986, Vol. 4 ›› Issue (4): 373-376.

• 论文 • 上一篇    

两种载流子发射的CC-DLTS信号分析及其应用

赵冷柱, 吴克勤   

  1. 上海科学技术大学
  • 收稿日期:1984-01-12 修回日期:1984-05-25 出版日期:1986-12-31 发布日期:1986-12-31

THE CC-DLTS SIGNAL ANALYSIS OF TWO KINDS OF CARRIERS EMISSION AND ITS APPLICATION

ZHAO LENGCHU, WU KEGIN   

  1. Shanghai University of Science and Technology
  • Received:1984-01-12 Revised:1984-05-25 Online:1986-12-31 Published:1986-12-31

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摘要： 界面态由于直接影响了MOS器件的阈值电压,沟道迁移率,频率特性而具有实际意义.最近M.Sohulz等[1]提出的恒电容深能级瞬态谱仪技术(CC-DLTS)引起人们极大兴趣.

Abstract: A new analysis is developed for evaluating the interface state parameters using CC-DLTS technique. Comparing with M. Schulz's theory, it has following features:(1) Measurement range can be extended into inversion region; (2) Interface state parameters of two kinds of carriers, majority and minority, can be extracted from the measurement.