English

应用科学学报 ›› 1987, Vol. 5 ›› Issue (2): 164-171.

• 论文 • 上一篇    下一篇

N/P硅外延片的少子扩散长度测量

杨恒青, 王志伟, 包宗明   

  1. 复旦大学
  • 收稿日期:1984-02-21 修回日期:1984-10-09 出版日期:1987-06-30 发布日期:1987-06-30

THE MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTH IN N LAYER OF N/P EPITAXIAL SILICON WAFER

YANG HENQING, WANG ZHIWEI, BAO ZENGMING   

  1. Fudan University
  • Received:1984-02-21 Revised:1984-10-09 Online:1987-06-30 Published:1987-06-30

PDF

69

摘要： 本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法.导出了入射光强1和结光电压V、光吸收系数a的理论关系,其中包含了外延层和衬底少子扩散长度的信息.

Abstract: Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer. The authors made a group of diagrams which contained the information of minority carrier diffusion lengths in the epitaxial layer and the substrate according to the theoretical analysis. When there is a thermal SiO2 thin film on the surface of the sample, the photovoltage of the sample depends on the characteristics of the epitaxial P-N junction.