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应用科学学报 ›› 1987, Vol. 5 ›› Issue (3): 275-278.

• 论文 • 上一篇    下一篇

砷化镓上等离子体阳极氧化膜的红外吸收光谱

刘玲1, 余菊华2, 刘春荣2   

  1. 1. 中国科学院固体物理研究所;
    2. 安徽大学
  • 收稿日期:1985-01-07 修回日期:1985-05-04 出版日期:1987-09-30 发布日期:1987-09-30

INFRARED ABSORPTION SPECTRA OF PLASMA ANODIZED FILM ON THE GaAsWAFER

LIU LING1, YU JUHUA2, LIU CHUNRONG2   

  1. Anhui University
  • Received:1985-01-07 Revised:1985-05-04 Online:1987-09-30 Published:1987-09-30

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摘要： GaAs的等离子体氧化在国内外已有报道.该薄膜的表面态密度约为1011/cm2·eV量级,击穿场强大于106V/cm.可用于MOSFET器件、半导体激光器和发光二极管的钝化膜,选择性(锌)扩散的掩蔽膜[6,7].本文报道GaAs上等离子体阳极氧化(OPA)膜的红外吸收光谱以及该氧化膜在一定波段内对GaAs衬底的增透作用。

Abstract: The infrared transmittanoe of high resistivity GaAs monoorystal and the plasma anodized film on GaAs substrate are measured by using an IR-450 S type infrared spectrophotometer. The experiments show that, in the range of 2.5-13.6 μm wavelength, the transmittance of GaAs monocrystal with thiohness of 0.70 mm is greater than 50%. In the range of 2.5-10 μm wavelength, the anodized film with thickness of 0.590 un has some anti-reflection effect on GaAs. In 10-26 μm wavelength, a strong and wide infrared absorption band is observed. This absorption band can be utilized to examine plasma anodized film on the GaAs wafer.