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应用科学学报 ›› 1988, Vol. 6 ›› Issue (3): 255-259.

• 论文 • 上一篇    下一篇

SOCl2和CF4在光纤MCVD过程中脱氢反应的平衡计算

严一民, 郭祝昆, 张英华   

  1. 中国科学院上海硅酸盐研究所
  • 收稿日期:1985-01-21 修回日期:1985-05-25 出版日期:1988-09-30 发布日期:1988-09-30

EQUILIBRIUM CALCULATIONS ON THE HYDROGEN PARTITION OF SOCl2 AND CF4 IN MCVD SILICA SYSTEM

YAN YIMIN, KUO CHUKUN, ZHANG YINGHUA   

  1. Shanghai Institute of Ceramics, Chinese Academy of Sciences
  • Received:1985-01-21 Revised:1985-05-25 Online:1988-09-30 Published:1988-09-30

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摘要： 计算了O2-H2O-CH4-SOCl2-SiO2和O2-H2O-CH4-CF4-SiO2系统与CVDSiO2光纤有关组成的多相平衡,给出在1073~2573K温度下沉积SiO2内的平衡羟基浓度并讨论了SOCl2与CF4添加剂在MCVD过程中的脱氢作用.

Abstract: The equilibria of the systems O2-H2O-CH4-SOCl2-SiO2 and O2-H2O-CH4-CF4-SiO2 for compositions of interest to the MCVD silica fibre process have been calculated. The equilibrating hydroxyl concentration in the resulting SiO2 glass at 1073-2573K is given and the ability of SOCl2 and CF4 to remove hydrogen from the chemical deposition system is discussed.