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应用科学学报 ›› 1989, Vol. 7 ›› Issue (1): 65-70.

• 论文 • 上一篇    下一篇

PbO2/MnO2半导体薄膜工艺与ESCA/AES研究

俞志中1, 胡南山2, 蔡炳初3   

  1. 1. 上海测试技术研究所;
    2. 上海电子通讯设备研究所;
    3. 上海交通大学
  • 收稿日期:1986-04-23 修回日期:1987-05-10 出版日期:1989-03-31 发布日期:1989-03-31

PbO2/MnO2 SEMICONDUCTING THIN FILM TECHNOLOGY AND ITS ESCA/AES STUDY

YU ZHIZHONG1, HU NANSHAN2, CAI BINGCHU3   

  1. 1. Shanghai Institute of Measuring Technology;
    2. Shanghai Institute of Electronic Communication Equipment;
    3. Shanghai Jiao Tong University
  • Received:1986-04-23 Revised:1987-05-10 Online:1989-03-31 Published:1989-03-31

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摘要： 在PbO2中掺MnO2,用射频偏压溅射技术制成PbO2/MnO2半导体薄膜,有较好的高低温特性,用它首次制成了TLMM薄膜大容量电容器[1].用粉末溅射法制备了纯正化学状态的MnO2膜,已用于光电倍增管的制造.用ESCA和AES技术监测工艺过程中薄膜组分含量及化学状态,从而调整了工艺参数与靶材比率.

Abstract: The PbO2/MnO2 semiconducting thin film is deposited by RF bias sputtering, doping PbO2 with MnO2. This film, on account of its good properties at high and low temperatures, can be used to fabricate large capacity film capacitor TLMM. The MnO2 thin film, which can be employed to manufacture the multiplier phototube, is sputter-deposited directly from powder MnO2, its composition and chemical aspect approaching standard MnO2. ESCA and AES techniques are used to monitor the ratio of PbO2/MnO2 and the composition of manganese oxide of the semiconducting thin film. In this way, the sputtering parameters are determined.