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应用科学学报 ›› 1990, Vol. 8 ›› Issue (3): 213-217.

• 论文 • 上一篇    下一篇

MOSFET漏源寄生电阻及有效沟道长度的萃取方法

孙兴初   

  1. 上海科学技术大学
  • 收稿日期:1989-05-15 修回日期:1989-08-05 出版日期:1990-09-30 发布日期:1990-09-30

AN EXTRACTION METHOD OF PARASITIC SOURCE/DRAIN RESISTANCE AND EFFECTIVE CHANNEL LENGTH

SUN XINGCHU   

  1. Shanghai University of Science and Technology
  • Received:1989-05-15 Revised:1989-08-05 Online:1990-09-30 Published:1990-09-30

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摘要： 提出一个精确萃取MOSFET漏源寄生电阻及有效沟道长度等参数的方法.这些参数的确定对于器件特性的模拟、分析以及对于生产工艺的监控具有实际意义.该方法采用一组特定的测试器件并使用计算机程序辅助来进行参数的萃取.使用萃取到的参数计算器件的漏电流特性并将其与实测数据进行比较,结果表明两者相符很好.

Abstract: Presented here is an accurate extraction method of parasitic source/drain resistance and effective channel length for MOSFET. The determination of these parameters is important to device modeling and analysis, and the fabrication process control. A special group of test devices was designed and a computer program was used for the parameter extraction procedure. The drain current characteristics of the devices were calculated by using the extracted parameters and compared with the measured data. The results showed a good agreement.