English

应用科学学报 ›› 1990, Vol. 8 ›› Issue (3): 268-270.

• 研究简报 • 上一篇    下一篇

氧化钇稳定的氧化锆上外延硅生长的研究

陈庆贵, 史日华   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1988-10-04 修回日期:1989-02-18 出版日期:1990-09-30 发布日期:1990-09-30

STUDIES OF EPITAXIAL GROWTH OF SILICON ON YTTRIA-STABILIZED ZIRCONIA

CHEN QINGGUI, SHI RIHUA   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1988-10-04 Revised:1989-02-18 Online:1990-09-30 Published:1990-09-30

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81

被引次数

1

摘要： 绝缘衬底上高质量亚微米厚硅单晶膜的获得对于制成高速度、高集成度、低功能和抗辐射的集成电路十分重要.蓝宝石上外延硅膜的生长和其CMOS/SOS集成电路的研究已为国内外学者所重视.

Abstract: Using the prolysis of SiH4, the epitaxial growth of silicon films on yttria-stabilized, cubic zirconia substrate has been investigated. The results indicate that high temperature annealing prior to epitaxial growth is necessary ior obtaining single crystalline silicon films. The annealing temperature of predeposition is above 1250℃ for 120 min. Using TEM and AES to analyze the films, it is shown that the single crystalline silicon films are good and have high resistivity.