English

应用科学学报 ›› 1990, Vol. 8 ›› Issue (3): 271-274.

• 研究简报 • 上一篇    下一篇

PVC膜铬(Ⅵ)离子敏感半导体器件的研究

方培生1, 黄强1, 丰达明2   

  1. 1. 西安交通大学;
    2. 广州有色金属研究院
  • 收稿日期:1987-10-24 修回日期:1988-10-17 出版日期:1990-09-30 发布日期:1990-09-30

A NEW Cr(VI)-ION SENSITIVE SEMICONDUCTOR DEVICE OF PVC MATRIX MEMBRANE

FANG PEISHENG1, HUANG JIANG1, FENG DAMING2   

  1. 1. Xian Jiao long University;
    2. Guangzhou Research Institute of Non-ferrous Metale
  • Received:1987-10-24 Revised:1988-10-17 Online:1990-09-30 Published:1990-09-30

PDF

88

被引次数

2

摘要： 铬离子敏感半导体器件,简称为Cr6+-ISFET.这种器件是以离子缔合物为活性物质,由于这种材料种类很多,容易制造,并可利用三元络合物来测定高价金属离子,测量一些有机离子,包括表面活性剂,药物、生物碱、浮选药剂和糖精等,这就为离子敏感半导体器件开辟了一个新的应用领域.

Abstract: This paper presents an integrated circuit technique with the aid of Si3N4/SiO2 as the insulator film, and PVC matrix membrane. The Cr6+-ISFET is developed. The test result has shown that Cr6+-ISFET exhibits a linear response to Cr ions within the concentration range of 1×10-2~1×10-5M. The calibration plots have a slope of 56 mV/PCr3F at 25℃. The lower concentration limit of the linear response to Cr (Ⅵ) ions may be 1×10-5M in HF solution.