English

应用科学学报 ›› 1991, Vol. 9 ›› Issue (2): 129-134.

• 论文 • 上一篇    下一篇

CsC8的能带结构

过建清, 陆栋   

  1. 复旦大学
  • 收稿日期:1988-12-03 修回日期:1989-11-18 出版日期:1991-06-30 发布日期:1991-06-30
  • 基金资助:
    国家自然科学基金资助课题

ENERGY BAND STRUCTURES OF CsC8

Guo JIANQING, Lu DONG   

  1. Fudan University
  • Received:1988-12-03 Revised:1989-11-18 Online:1991-06-30 Published:1991-06-30

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摘要： 用Ohno,Nakao和Kamimura的方法计算了石墨插层化合物CsC8的能带结构.表明Cs的6S能带底位于费密能级以上3.6eV处。所以,铯原子层的价电子全部转移到石墨碳原子层的反键π能带.所得结果与其他计算结果相符.

关键词: 能带, 石墨插层化合物

Abstract: The band structures of cesium graphite intercalation compound CsC8 is calculated with the method put forward by Ohno, Nakao and Kamimura. The band bottom of 6S electrons of cesium lies 3.6eV above the Fermi level. Hence all the valence electrons of the cesium atom layer transfer to the antibonding π band of graphite carbon layers. The obtained band structure is in good agreement with that of other calculations.

Key words: energy band, graphite intercalation compound