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应用科学学报 ›› 1991, Vol. 9 ›› Issue (2): 185-188.

• 研究简报 • 上一篇    

InxGa1-xAs/GaAs超晶格的X射线衍射研究

钟福民, 陈京一   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1989-12-04 修回日期:1990-03-14 出版日期:1991-06-30 发布日期:1991-06-30

X-RAY DIFFRACTOMETRY OF THE STRUCTURE OF InxGa1-xAs/GaAs SUPERLATTICE

CHONG FUMIN, CHEN JINGYI   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1989-12-04 Revised:1990-03-14 Online:1991-06-30 Published:1991-06-30

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摘要： 超晶格材料是用现代薄膜生长技术制成的一种新型材料。自从1970年美国首次在GaAs半导体上制成了超晶格结构后[1],又研制出GaAs和各种Ⅲ-Ⅴ族化合物超晶格材料,而后Ⅳ-Ⅳ族、Ⅱ-Ⅵ族,以及非晶态半导体超晶格等也相继出现,有一些已经获得实用,制成了重要的微电子和光电子器件。

关键词: 超晶格, 结构参数, X射线衍射

Abstract: A conventional X-ray diffractometer is used to analyse the structure of InxGa1-x As/GaAs superlattice. Kinematical approximation is employed in the analysis. The results are similar to those got by double-crystal diffractometry The differences between the two methods are also discussed.

Key words: X-ray diffraction, superlattice, structure parameters