窄栅效应的二维数值分析

应用科学学报 ›› 1992, Vol. 10 ›› Issue (1): 71-77.

窄栅效应的二维数值分析

杨彪, 季超仁

上海科技大学, 上海电子物理所

收稿日期:1990-04-14 修回日期:1990-08-07 出版日期:1992-03-31 发布日期:1992-03-31

TWO-DIMENSIONAL NUMERICAL ANALYSIS OF THE NARROW-GATE EFFECT

YANG BIAO, JI CHJAOREN

Shanghai University of Science and Technology

Received:1990-04-14 Revised:1990-08-07 Online:1992-03-31 Published:1992-03-31

摘要/Abstract

摘要： 在MOS器件的二维窄栅效应(NGE)的数值分析中;引入了迁移率模型.改进了chung-Sah的常数迁移率近似的结果.发现其电导曲线的斜率随棚压增大由增加变为减少;其阈值电压的窄栅效应变化比常数迁移率时的大,并提出了新的窄栅效应阈值电压模型公式.当从实验上或二维计算中已知一个窄栅器件以及宽栅器件的电导——栅压特性后,就可推知其它栅宽器件的阈值电压.此模型公式用二维计算值及实验值进行了验证.

关键词: 窄栅效应, MOS晶体管

Abstract: The two-dimensional numerical analysis using constant approximation, obtained by Chung and Sah, has been improved by adopting the mobility model. It is found that the slope of the oonduotanoe-gate voltage curve changes from increase to decrease with increasing gate voltage, and the narrow-gate shift of the threshold voltage is larger than that obtained from constant mobility approximation. A new model is proposed here to predict the narrow-gate shift of the threshold voltage. When the conduotanoe-gate voltage characteristics of one narrow-gate MOSPET and one wide-gate MOSFET are got from 2-D numerical analysis or experimental measurement, the threshold voltage shift of any other.narrow-gate MOSFET can then be determined subsequently. This model is checked -and agrees well with the 2-D numerical and experimental results.

Key words: MOSFET, narrow-gate effect

杨彪, 季超仁. 窄栅效应的二维数值分析[J]. 应用科学学报, 1992, 10(1): 71-77.

YANG BIAO, JI CHJAOREN. TWO-DIMENSIONAL NUMERICAL ANALYSIS OF THE NARROW-GATE EFFECT[J]. Journal of Applied Sciences, 1992, 10(1): 71-77.