热壁外延法生长Zn1-xMnxSe半磁半导体薄膜

应用科学学报 ›› 1992, Vol. 10 ›› Issue (2): 161-166.

热壁外延法生长Zn_1-xMn_xSe半磁半导体薄膜

王杰, 吕宏强, 沈军, 李哲深, 王建宝, 沈孝良

复旦大学

收稿日期:1991-02-01 修回日期:1991-06-12 出版日期:1992-06-30 发布日期:1992-06-30

GROWTH OF Zn_1-xMn_xSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE

WANG JIE, LU HONGQIANG, SHEN JUN, LI ZHESHEN, WANG JIANBAO, SHEN XIAOLIANG

Fudan University

Received:1991-02-01 Revised:1991-06-12 Online:1992-06-30 Published:1992-06-30

摘要/Abstract

摘要： 作者用热壁外延方法在(100)GaAs衬底上生长Zn_1-xMn_xSe拉半磁半导体薄膜,并用X射线衍射(XRD)、喇曼散射、俄歇电子能谱(AES)等技术对薄膜性能作了研究.实验结果表明已成功地生长出(100)Zn_1-xMn_xSe单晶薄膜,其中x最大达到0.17.

关键词: 热壁外延, 半磁半导体, 硒锰锌薄膜

Abstract: Zn_1-xMn_xSe films are grown on the (100) GaAs substrate by hot wall epitaxy. The films are studied by X-ray diffraction, Raman and AES. The results show thai Single crystal (100) Zn_1-xMn_xSe films have been gotten and that x can be up to 0.17.

Key words: hot wall epitaxy, diluted magnetic semiconductors, Zn_1-xMn_xSe films

王杰, 吕宏强, 沈军, 李哲深, 王建宝, 沈孝良. 热壁外延法生长Zn_1-xMn_xSe半磁半导体薄膜[J]. 应用科学学报, 1992, 10(2): 161-166.

WANG JIE, LU HONGQIANG, SHEN JUN, LI ZHESHEN, WANG JIANBAO, SHEN XIAOLIANG. GROWTH OF Zn_1-xMn_xSe FILMS BY HOT WALL EPITAXY ON GaAs SUBSTRATE[J]. Journal of Applied Sciences, 1992, 10(2): 161-166.

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