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应用科学学报 ›› 1992, Vol. 10 ›› Issue (3): 199-205.

• 论文 • 上一篇    下一篇

N型LPE和VPE-GaAs电子辐照缺陷能级的研究

胡雨生   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1991-01-19 修回日期:1991-04-10 出版日期:1992-09-30 发布日期:1992-09-30
  • 基金资助:
    国家自然科学基金资助项目

A STUDY OF DEFECTS FROM ELECTRON IRRADIATION IN N-TYPE LPE AND VPE-GaAs LAYERS

HU YUSHENG   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1991-01-19 Revised:1991-04-10 Online:1992-09-30 Published:1992-09-30

PDF

98

摘要： 用深能级瞬态谱(DLTS)法,结合表面光伏(SPV)法,研究了1MeV能量和不同剂量的电子辐照下对N型液相外延(LPE)、汽相外延(VPE)GaAs层逐次引入的缺陷和400-500K温区等时退火行为.讨论了随辐照剂量逐次增大及等时退火后缺陷浓度NT的变化,以及根据L2/D对NT-1作图来判别电照引入的"E"缺陷能级中对少子寿命起主要控制作用的复合中心能级.

关键词: 电子辐照, 少子寿命, 复合中心

Abstract: In this paper, using deep-level transient speotroacopy (DLTS) and surface photo voltage (SPV), the defects induced by different doses of electron irradiation with 1 MeV of energy in the N-type LPE and VPE-GaAs layers, and their isochronal annealing behavior at temperatures ranging from 400 K to 550 K have been systematically studied. The variations of defect concentration NT are discussed as the electron radiation dose increases and after isochronal annealing takes place. And it is shown that the main recombination centre level among all the defect levels induced by electron radiation can be identified according to the L2/D-NT-1 graph.

Key words: Electron irradiation, Recombination centre, Minority carrier life