English

应用科学学报 ›› 1992, Vol. 10 ›› Issue (3): 227-232.

• 论文 • 上一篇    下一篇

半导体伏安行为的计算机模拟

谈明伟, 徐敏, 张恒华   

  1. 上海科学技术大学
  • 收稿日期:1990-12-11 修回日期:1991-04-12 出版日期:1992-09-30 发布日期:1992-09-30

THE STUDIES OF POLARIZATION BEHAVIOR ON SEMICONDUCTOR ELECTRODES

TANG MINGWEI, XU MIN, ZHANG HENGHUA   

  1. Shanghai University of Science and Technology
  • Received:1990-12-11 Revised:1991-04-12 Online:1992-09-30 Published:1992-09-30

PDF

69

摘要： 推导了适用性广泛的有关半导体在氧化还原对溶液中的伏安行为的数学表达式,利用计算机FORTRAN语言计算了表达式中出现的表征浓差极化的定积分的数值解.然后,用最小二乘法对用M351-1腐蚀综合测试仪测得的不锈钢彩色膜的伏安曲线进行了曲线拟合,求得了表观传递系数.并由此表观传递系数利用文中推得的表达式求得了过电位在彩色膜和Helmholtz层之间的分配系数.

关键词: 伏安行为, 半导体, 不锈钢彩色膜

Abstract: The theoretical concepts of polarization behavior of the Fe (ON)64-/Fe(ON)63- redox couple on semiconducting electrodes in a boric acid/sodium borate buffer solution are discussed in this paper. The concentration polarization is considered to determine the overpotential parameters of the redox couple through a study of polarization curves of a semiconducting electrode polarized by linear. sweep potential. It is found that a part of the overpotential occurs in colored films on stainless steel. In addition, the mechanism by which the charge transfer reaction proceeds on films is also approached.

Key words: polarizatioja, colored film, semioonduotor