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应用科学学报 ›› 1993, Vol. 11 ›› Issue (1): 11-15.

• 论文 • 上一篇    下一篇

在工作状态下感应反型层太阳电池的薄层电阻

张秀淼   

  1. 杭州大学
  • 收稿日期:1991-04-26 修回日期:1991-07-29 出版日期:1993-03-31 发布日期:1993-03-31
  • 基金资助:
    高纯硅与硅烷国家实验室基金资助的课题

THE INVERSION LAYER RESISTANCE IN INDUCED INVERSION LAYER SOLAR CELLS UNDER OPERATING CONDITIONS

ZHANG XIUMIAO   

  1. Hangzhou University
  • Received:1991-04-26 Revised:1991-07-29 Online:1993-03-31 Published:1993-03-31

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摘要： 给出了决定在工作状态下感应反型层太阳电池薄层电阻的一组方程.与以前的理论不同之处是考虑到了薄层电阻对电地工作状态的依赖性.分析中计及了电地外表面上的象电荷和二氧化硅-硅界面的界面电荷的作用.文中以氮化硅-二氧化硅-硅结构的感应反型层太阳电池作为实例,研究了它的薄层电阻与工作电压的关系.结果表明,当工作电压在0,4V附近时,薄层电阻有一最小值,而当工作电压大于0.4V时,薄层电阻随工作电压的增高而急剧增大.

关键词: 反型层电阻, 太阳电池, 半导体

Abstract: In this paper a series of equations, which determines the inversion layer resistance in an induced inversion layer solar cell is given. Our study ia different from the previous work in theory as the dependence of the inversion-layer resistance on the operating conditions is considered, and the effects of the interface charges at the oxide-silicon interface and the image charges at the outer surface are taken into account in the analysis. Taking the SiN insulator layer solar cell as a practical example, we investigate the relationship between the Inversion layer resistance and the operating voltage in the induced inversion layer solar cells of the SiN-SiO2-Si structure. The result indicates that the inversion layer resistance has a minimum value while the operating voltage is near 0.4V, and that when the operating voltage is higher than 0.4V, a drastic increase of the inversion layer resistance will appear.

Key words: inversion layer resistance, solar cellg, semiconductors