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应用科学学报 ›› 1993, Vol. 11 ›› Issue (3): 258-264.

• 论文 • 上一篇    下一篇

Si衬底上金刚石薄膜的成核和生长机理

屠宇强, 夏义本, 王鸿   

  1. 上海科学技术大学
  • 收稿日期:1991-06-24 修回日期:1991-12-20 出版日期:1993-09-30 发布日期:1993-09-30

NUCLEATION AND GROWTH MECHANISMS OF DIAMOND FILM ON SILICON SUBSTRATE

TU YUQIANG, XIA YIBEN, WANG HONG   

  1. Shanghai University of Science and Technology
  • Received:1991-06-24 Revised:1991-12-20 Online:1993-09-30 Published:1993-09-30

PDF

96

被引次数

2

摘要： 以酒精为碳源,用热丝CVD法,对不同表面状况的Si衬底作金刚石沉积比较.讨论了薄膜的成核、生长机制,认为CH2是成核的主要气相种类,H原子直接参与了成核和生长,它们在薄膜沉积中起了极为重要的作用.解释了毛糙表面的Si衬底上金刚石易成核的现象.

关键词: 成核, 热丝法, 生长机理, 金刚石薄膜, 粗糙表面

Abstract: Diamond crystallites have been grown on silicon substrates of different surface conditions by hot-filament method using alcohol. The nuoleation and growth mechanisms of the diamond film have been discussed. CH3 is considered to be the main gas species of diamond nucleation; hydrogen atoms play an important role in nucleation and growth; and it is easier for diamond to nucleate on a silicon substrate of comparatively rough surface than on the one of a glossy surface.

Key words: diamond film, hot filament method, rough surface, nucleating growth mechanism