深扩散和表面减薄改善硅扩散结太阳电池性能的可能性

应用科学学报 ›› 1994, Vol. 12 ›› Issue (1): 83-87.

深扩散和表面减薄改善硅扩散结太阳电池性能的可能性

张秀淼

杭州大学

收稿日期:1991-07-08 修回日期:1992-01-26 出版日期:1994-03-31 发布日期:1994-03-31

THE POSSIBILITY OF IMPROVEMENT IN PERORMANCE OF DIFFUSED JUNCTION SILICON SOLAR CELLS BY MAKING DEEPER DIFFUSION AND ETCHING THE SURFACE

ZHANG XIUMIAO

Hangzhow university

Received:1991-07-08 Revised:1992-01-26 Online:1994-03-31 Published:1994-03-31

摘要/Abstract

摘要： 前表面复合速度对硅扩散结太阳电池性能的影响已经由许多作者进行过研究^[1~7].

关键词: p-n结, 半导体, 太阳电池

Abstract: Assuming the diffused impurity profile to be Gaussian,a resolution of the minority carrier continuity equation for the diffused region thinned by etching the surface has been given. On the basis of that, computations and analyses have been made for some practical examples. It has been shown that in order to increase the short circuit current contributed by the n⁺ diffused region, besides the lower surface recombination velocity and lower built-in field gradient,the higher built in field itseif is also important.In the present work it has also been shown that making deeper diffusion and etching the surface are effective to increase short circuit current contributed by the n⁺ diffused region only if the deeper diffusion is made together with the higher surface impurity concentration.

Key words: p-n junction, sem conductor, solar cell

张秀淼. 深扩散和表面减薄改善硅扩散结太阳电池性能的可能性[J]. 应用科学学报, 1994, 12(1): 83-87.

ZHANG XIUMIAO. THE POSSIBILITY OF IMPROVEMENT IN PERORMANCE OF DIFFUSED JUNCTION SILICON SOLAR CELLS BY MAKING DEEPER DIFFUSION AND ETCHING THE SURFACE[J]. Journal of Applied Sciences, 1994, 12(1): 83-87.

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