XH-REP-2正性电子束抗蚀剂的工艺研究

应用科学学报 ›› 1994, Vol. 12 ›› Issue (1): 88-91.

XH-REP-2正性电子束抗蚀剂的工艺研究

王国荃, 罗腾蛟, 王琴美, 吴月莉

中国科学院上海冶金研究所

收稿日期:1991-11-18 修回日期:1992-10-07 出版日期:1994-03-31 发布日期:1994-03-31

STUDY OF OPTIMAL PROCESSING FORXH-REP-2 POSITIVE ELECTRON-BEA MRESISTS

WANG GUOQUAN, LOU TENGJIAO, WANG QINMEI, WU YULI

Shanghai Institute of Metallurgy, Academia Sinica

Received:1991-11-18 Revised:1992-10-07 Online:1994-03-31 Published:1994-03-31

摘要/Abstract

摘要： 普通光学的曝光分辨率受到光波衍射效应的限制,难以制作1μm以下的图形;当PG图形分割的矩形数超过20万,普通光学曝光就显得难以胜任.

关键词: 等离子体去渣, 电子束曝光

Abstract: This paper describes briefly the principle and characteristics of electron-beam lithography.The mechanism of the interaction of energetic electrons with resist materials is also described.The whole processing of XH-REP-2 positive electronbcam resists discussed in detail. We have found a group of optimal parameters of XH-REP-2 positive electron-beam resists and come to the conclusion that XH-REP-2 positive electron-beam resists have high resolution and sensitivity.

Key words: descum, electron-beam lithography

王国荃, 罗腾蛟, 王琴美, 吴月莉. XH-REP-2正性电子束抗蚀剂的工艺研究[J]. 应用科学学报, 1994, 12(1): 88-91.

WANG GUOQUAN, LOU TENGJIAO, WANG QINMEI, WU YULI. STUDY OF OPTIMAL PROCESSING FORXH-REP-2 POSITIVE ELECTRON-BEA MRESISTS[J]. Journal of Applied Sciences, 1994, 12(1): 88-91.