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应用科学学报 ›› 1994, Vol. 12 ›› Issue (3): 196-202.

• 论文 • 上一篇    下一篇

砷化镓表面P2S5/NH4OH钝化研究

宗祥福, 翁渝民, 刘开锋, 范志能, 李川, 潘忠伟   

  1. 复旦大学
  • 收稿日期:1992-05-25 修回日期:1992-12-17 出版日期:1994-09-30 发布日期:1994-09-30

STUDIES ONN PASSIVATING A P2S5/NH4OH-TREATED GaAs SURFACE

ZONG XIANGFU, WENG YUMIN, LID KEIFENG, FAN ZHINENG, LI CHAN, PAN ZONGWEI   

  1. Fudan University
  • Received:1992-05-25 Revised:1992-12-17 Online:1994-09-30 Published:1994-09-30

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摘要： 用X光电子能谱(XPS)、先致发光(PL)和俄歇电子能量谱(AES)研究P2S5/NH4OH对n型GaAs (100)晶面的钝化作用.测试结果表明,钝化后在砷化镓(100)面上的自然氧化物已被除去,表面形成了一层性质稳定的硫原子层.硫原子与砷、镓原子分别有效地成键,阻止了砷化镓表面氧化物的组成,并消除了表面存在的悬挂键,从而大大优化了GaAs (100)面的特性.PL实验结果支持了上述结论.实验结果表明钝化后GaAs表面复合速度下降,表面态密度降低.

关键词: GaAs表面, P2S5/NH4OH, 硫钝化

Abstract: The effect of P2S5/NH4OH treatment on the (100) surface of GaAs was studied by X-ray photoelectron spectroscopy (XPS),Auger electron spectroscopy (AES) and photoluminescence (PL).The results show that after passivation the native oxide of GaAs Surface is completely removed and a passivation layer mainly composed of As-Sand Ga-Sbonds forms on the sample surface,and prevents the adsorption of oxygen. This concluson has been supported by results of PL experiments.The PL intensity and its contrast obtained on GaAs surface depend on the surface recombination and they are controlled by passivation. The results of PL experiments show the reduction of surface recombination and of the density of surface states P2S5/NH4OH treatment is more stable than the others,such as Na2S.

Key words: GaAs, P2S5/NH4OH, Passivation