硅/硅直接键合应力的Raman谱研究

应用科学学报 ›› 1994, Vol. 12 ›› Issue (3): 223-226.

硅/硅直接键合应力的Raman谱研究

黄庆安, 张会珍, 陈军宁, 童勤义

东南大学

收稿日期:1992-05-11 修回日期:1992-12-16 出版日期:1994-09-30 发布日期:1994-09-30

RAMAN SPECTRUM ANALYSIS OF STRESS DUE TO SILICON DIRECT BONDING

HUANG QINGAN, ZHANG HUIZHENG, CHEN JUNNING, TONG QINYI

Southeast University

Received:1992-05-11 Revised:1992-12-16 Online:1994-09-30 Published:1994-09-30

摘要/Abstract

摘要： 介绍了Raman谱测试硅片微区应力的方法.用Raman谱研究了硅/硅直接键合工艺引入的应力,测试结果表明,高温键合后,硅片表面存在局部的张应力或压应力.应力值最高达7.5×10³N/cm².高温退火,应力略有降低.

关键词: Raman谱, 硅应力, 硅直接键合

Abstract: A method of measuring the stress in silicon with the Raman spectrum is introduced. The stress due to silicon direct bonding is studied using the spectrum.It has been shown that there exists local tensile or oompressive stress in bonded silicon after high temperature bonding.The stress is as large as 7.5×10³N/cm².

Key words: silicon direct bonding, silicon stress, Raman spectrum

黄庆安, 张会珍, 陈军宁, 童勤义. 硅/硅直接键合应力的Raman谱研究[J]. 应用科学学报, 1994, 12(3): 223-226.

HUANG QINGAN, ZHANG HUIZHENG, CHEN JUNNING, TONG QINYI. RAMAN SPECTRUM ANALYSIS OF STRESS DUE TO SILICON DIRECT BONDING[J]. Journal of Applied Sciences, 1994, 12(3): 223-226.